Vertically aligned carbon nanotube heterojunctions

Applied Physics Letters

Volumn 85, Issue 12, 2004, Pages 2364-2366

  Cassell, Alan M ^a   Li, Jun ^a   Stevens, Ramsey M D ^a   Koehne, Jessica E ^a   Delzeit, Lance ^a   Ng, Hou Tee ^a   Ye, Qi ^a   Han, Jie ^a   Meyyappan, M ^a  

^a NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ETCHING; MULTIWALLED CARBON NANOTUBES (MWCNT); NANOTUBE JUNCTIONS; TUNNEL BARRIERS;

ATOMIC FORCE MICROSCOPY; CATHODES; ELECTROCHEMISTRY; ELECTRON MICROSCOPY; ETCHING; HETEROJUNCTIONS; INTEGRATED CIRCUITS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

CARBON NANOTUBES;

EID: 7044253185     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1794356     Document Type: Article

References (19)

1. Z. F. Ren, Z. P. Huang, J. W. Xu, J. H. Wang, P. Bush, M. P. Siegel, and P. N. Provencio, Science 282, 1105 (1998).
2. V. I. Merkulov, A. V. Melechko, M. A. Guillorn, D. H. Lowndes, and M. L. Simpson, Appl. Phys. Lett. 79, 2970 (2001).
3. L. Delzeit, I. McAnich, B. A. Gruden, D. B. Hash, B. Chen, J. Han, and M. Meyyappan, J. Appl. Phys. 91, 6027 (2002).
4. B. A. Gruden, A. M. Cassell, Q. Ye, and M. Meyyappan, J. Appl. Phys. 94, 4070 (2003).
5. A. M. Cassell, Q. Ye, B. A. Graden, J. Li, P. C. Sarrazin, H. T. Ng, J. Han, and M. Meyyappan, Nanotechnology 15, 9 (2004).
6. M. Meyyappan, L. Delzeit, A. Cassell, and D. Hash, Plasma Sources Sci. Technol. 12, 205 (2003).
7. Carbon Nanotubes: Science and Applications, edited by M. Meyyappan (CRC Press, Boca Raton, EL, 2004).
8. K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, W. I. Milne, D. G. Hasko, G. Pirio, P. Legagneux, F. Wyczisk, and F. Pribat, Appl. Phys. Lett. 79, 1534 (2001).
9. M. A. Guillorn, A. V. Melecnko, V. I. Merkulov, E. D. Ellis, M. L. Simpson, D. H. Lowndes, L. R. Baylor, and G. J. Bordonaro, J. Vac. Sci. Technol. B 19, 2598 (2001).
10. J. Li, H. T. Ng, A. Cassell, W. Fan, H. Chen, Q. Ye, J. Koehne, J. Han, and M. Meyyappan, Nano Lett. 3, 597 (2003).
11. T. E. McKnight, A. V. Melechko, G. D. Griffin, M. A. Guillorn, V. I. Merkulov, F. Sema, D. K. Hensley, M. J. Doktycz, D. H. Lowndes, and M. L. Simpson, Nanotechnology 14, 551 (2003).
12. F. Kreupl, A. P. Graham, G. S. Duesberg, W. Steinhögl, M. Liebau, E. Unger, and W. Hönlein Microelectron. Eng. 64, 399 (2002).
13. J. Li, Q. Ye, A. Cassell, H. T. Ng, R. Stevens, J. Han, and M. Meyyappan, Appl. Phys. Lett. 82, 2491 (2003).
14. Q. Ngo, D. Petranovic, S. Krishnan, A. M. Cassell, Q. Ye, J. Li, M. Meyyappan, and C. Y. Yang, IEEE Trans. Nanotechnol. 3, 311 (2004).
15. X. Yang, M. A. Guillorn,. D. Austin, A. V. Melechko, H. Cui, H. M. Meyer III, V. I. Merkolov, J. -B. O. Caughman, D. H. Lowndes, and M. L. Simpson, Nano-Lett. 3, 1551 (2003).
16. A. Buldum and J. P. Lu, Phys. Rev. B 63, 161403 (2001).
17. J. Li, R. Stevens, L. Delzeit, H. T. Ng, A. Cassell, J. Han, and M. Meyyappan, Appl. Phys. Lett. 81, 910 (2002).
18. J. Kim, J. O. Lee, H. Oh, K. H. Yoo, and J. J. Kim, Phys. Rev. B 64, 161404 (2001).
19. J. Hu, M. Ouyang, P. Yang, and C. M. Lieber, Nature (London) 399, 48 (1999).