Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures

Physica Status Solidi (B) Basic Research

Volumn 241, Issue 12, 2004, Pages 2735-2738

  Ruterana, R ^a   Singh, P ^a   Kret, S ^b   Jurczak, G ^c   Maciejewski, G ^c   Dluzewski, P ^c   Cho, H K ^d   Choi, R J ^e   Lee, H J ^e   Suh, E K ^e  

^a CNRS   (France)

^b INSTITUTE OF PHYSICS   (Poland)

^c INSTITUTE OF FUNDAMENTAL TECHNOLOGICAL RESEARCH   (Poland)

^d Dong A University   (South Korea)

^e Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; COMPUTATIONAL GEOMETRY; CRYSTAL ATOMIC STRUCTURE; DEFECTS; FINITE ELEMENT METHOD; HIGH RESOLUTION ELECTRON MICROSCOPY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CLUSTER DEFORMATION; COMPOSITION FLUCTUATIONS; NANOMETER SCALES; STRAIN FIELDS;

HETEROJUNCTIONS;

EID: 7044227817     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200405084     Document Type: Conference Paper

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