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Volumn 96, Issue 7, 2004, Pages 3716-3720

In-plane refractive-index anisotropy in porous silicon layers induced by polarized illumination during electrochemical etching

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRIC FIELD EFFECTS; ETCHING; LIGHT INTERFERENCE; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POLARIZATION; REFRACTIVE INDEX;

EID: 7044227655     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1784613     Document Type: Article
Times cited : (6)

References (37)
  • 20
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    • 7044239976 scopus 로고    scopus 로고
    • edited by S. G. Pandalai (Transworld Research Network, Trivandrum, India)
    • H. Koyama, in Recent Research Developments in Applied Physics, edited by S. G. Pandalai (Transworld Research Network, Trivandrum, India, 2003), Vol. 6, Part 1, p. 373.
    • (2003) Recent Research Developments in Applied Physics , vol.6 , Issue.PART 1 , pp. 373
    • Koyama, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.