Atomic nitrogen doping in p-ZnSe with high activation ratio using a high-power plasma source

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 411-414

  Kimura, K ^a,c,d   Miwa, S ^a,b,c   Jin, C G ^a,e   Kuo, L H ^a,c,f   Yasuda, T ^a,e   Ohtake, A ^a,c   Tanaka, K ^a,e   Yao, T ^a,e,g   Kobayashi, H ^b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b SONY CORPORATION   (Japan)

^c Angstrom Technology Partnership   (Japan)

^d SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^e NATL INST FOR ADV INTERDISC RES   (Japan)

^f Super Epitaxial Products Inc   (United States)

^g TOHOKU UNIVERSITY   (Japan)

Author keywords

Molecular beam epitaxy (MBE); Nitrogen doping; Plasma source; ZnSe

Indexed keywords

EID: 0000918722     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)80086-9     Document Type: Article

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