n-type ZnSe crystal growth by MOVPE under atmospheric pressure with UV irradiation on stoichiometry-controlled p-type ZnSe crystals

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 537-541

  Sakurai, F ^a,b   Suto, K ^a,b,c   Oyama, Y ^a,b,c   Nishizawa, J ^a,b  

^a Telecommunications Advancement Organization of Japan   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CARRIER CONCENTRATION; IODINE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; STOICHIOMETRY; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS;

ACTIVATION RATIO; DIETHYLSELENIDE; DIETHYLZINC; ETHYLIODIDE; IODINE DOPING; ULTRAVIOLET IRRADIATION;

CRYSTAL GROWTH;

EID: 0033723619     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00147-0     Document Type: Article

References (9)

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