-
1
-
-
57649136745
-
Enhanced and partially polarized output of a light-emitting diode with its InGaN/GaN quantum well coupled with surface plasmons on a metal grating
-
K. C. Shen, C. Y. Chen, H. L. Chen, C. F. Huang, Y. W. Kiang, C. C. Yang, and Y. J. Yang, "Enhanced and partially polarized output of a light-emitting diode with its InGaN/GaN quantum well coupled with surface plasmons on a metal grating," Appl. Phys. Lett., vol. 93, p. 231111, 2008.
-
(2008)
Appl. Phys. Lett
, vol.93
, pp. 231111
-
-
Shen, K.C.1
Chen, C.Y.2
Chen, H.L.3
Huang, C.F.4
Kiang, Y.W.5
Yang, C.C.6
Yang, Y.J.7
-
2
-
-
45749089682
-
Polarized light emission from photonic crystal light-emitting diodes
-
C. F. Lai, J. Y. Chi, H. H. Yen, H. C. Kuo, C. H. Chao, H. T. Hsueh, J. F. T. Wang, C. Y. Huang, and W. Y. Yeh, "Polarized light emission from photonic crystal light-emitting diodes," Appl. Phys. Lett., vol. 92, p. 243118, 2008.
-
(2008)
Appl. Phys. Lett
, vol.92
, pp. 243118
-
-
Lai, C.F.1
Chi, J.Y.2
Yen, H.H.3
Kuo, H.C.4
Chao, C.H.5
Hsueh, H.T.6
Wang, J.F.T.7
Huang, C.Y.8
Yeh, W.Y.9
-
3
-
-
34548449882
-
Linearly polarized emission from GaInN light emitting diodes with polarization-enhancing reflector
-
Sep
-
M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, and J. Cho, "Linearly polarized emission from GaInN light emitting diodes with polarization-enhancing reflector," Opt. Express, vol. 15, no. 18, pp. 11213-11218, Sep. 2007.
-
(2007)
Opt. Express
, vol.15
, Issue.18
, pp. 11213-11218
-
-
Schubert, M.F.1
Chhajed, S.2
Kim, J.K.3
Schubert, E.F.4
Cho, J.5
-
4
-
-
47749136638
-
Optical polarization characteristics of light emission from sidewalls of primary color light-emitting diodes
-
H. Masui, N. N. Fellows, S. Nakamura, and S. P. DenBaars, "Optical polarization characteristics of light emission from sidewalls of primary color light-emitting diodes," Semicond. Sci. Technol., vol. 23, p. 072001, 2008.
-
(2008)
Semicond. Sci. Technol
, vol.23
, pp. 072001
-
-
Masui, H.1
Fellows, N.N.2
Nakamura, S.3
DenBaars, S.P.4
-
5
-
-
58149293775
-
Optical polarization characteristics of m-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure
-
H. Masui, H. Yamada, K. Iso, S. Nakamura, and S. P. DenBaars, "Optical polarization characteristics of m-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure," J. Phys. D: Appl. Phys., vol. 41, p. 225104, 2008.
-
(2008)
J. Phys. D: Appl. Phys
, vol.41
, pp. 225104
-
-
Masui, H.1
Yamada, H.2
Iso, K.3
Nakamura, S.4
DenBaars, S.P.5
-
6
-
-
34547655643
-
Polarization of light emission by 460 nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrates
-
M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, and J. Cho, "Polarization of light emission by 460 nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrates," Appl. Phys. Lett., vol. 91, p. 051117, 2007.
-
(2007)
Appl. Phys. Lett
, vol.91
, pp. 051117
-
-
Schubert, M.F.1
Chhajed, S.2
Kim, J.K.3
Schubert, E.F.4
Cho, J.5
-
7
-
-
17944381225
-
Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes
-
N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, "Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes," Appl. Phys. Lett., vol. 86, p. 111101, 2005.
-
(2005)
Appl. Phys. Lett
, vol.86
, pp. 111101
-
-
Gardner, N.F.1
Kim, J.C.2
Wierer, J.J.3
Shen, Y.C.4
Krames, M.R.5
-
8
-
-
33845757205
-
Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on (1122)-plane GaN
-
H. Masui, T. J. Baker, M. Iza, H. Zhong, S. Nakamura, and S. P. Den-Baars, "Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on (1122)-plane GaN," J. Appl. Phys., vol. 100, p. 113109, 2006.
-
(2006)
J. Appl. Phys
, vol.100
, pp. 113109
-
-
Masui, H.1
Baker, T.J.2
Iza, M.3
Zhong, H.4
Nakamura, S.5
Den-Baars, S.P.6
-
9
-
-
58149236803
-
Enhanced light collection of GaN light emitting devices by redirecting the lateral emission using nanorod reflectors
-
Y. W. Cheng, K. M. Pan, C. Y. Wang, H. H. Chen, M. Y. Ke, C. P. Chen, M. Y. Hsieh, H. M.Wu, L. H. Peng, and J. J. Huang, "Enhanced light collection of GaN light emitting devices by redirecting the lateral emission using nanorod reflectors," Nanotechnology, vol. 20, p. 035202, 2009.
-
(2009)
Nanotechnology
, vol.20
, pp. 035202
-
-
Cheng, Y.W.1
Pan, K.M.2
Wang, C.Y.3
Chen, H.H.4
Ke, M.Y.5
Chen, C.P.6
Hsieh, M.Y.7
Wu, H.M.8
Peng, L.H.9
Huang, J.J.10
-
10
-
-
1642296528
-
Optical anisotropy of wurtzite GaN on sapphire characterized by spectroscopic ellipsometry
-
C. X. Lian, X. Y. Li, and J. Liu, "Optical anisotropy of wurtzite GaN on sapphire characterized by spectroscopic ellipsometry," Semicond. Sci. Technol., vol. 19, pp. 417-420, 2004.
-
(2004)
Semicond. Sci. Technol
, vol.19
, pp. 417-420
-
-
Lian, C.X.1
Li, X.Y.2
Liu, J.3
-
11
-
-
0029288279
-
High-efficiency multilayer dielectric diffraction gratings
-
Apr
-
M. D. Perry, R. D. Boyd, J. A. Britten, D. Decker, B. W. Shore, C. Shannon, and E. Shults, "High-efficiency multilayer dielectric diffraction gratings," Opt. Lett., vol. 20, no. 8, pp. 940-942, Apr. 1995.
-
(1995)
Opt. Lett
, vol.20
, Issue.8
, pp. 940-942
-
-
Perry, M.D.1
Boyd, R.D.2
Britten, J.A.3
Decker, D.4
Shore, B.W.5
Shannon, C.6
Shults, E.7
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