Electrical spin injection into Si(001) through a SiO2 tunnel barrier

Applied Physics Letters

Volumn 95, Issue 17, 2009, Pages

  Li, C H ^a   Kioseoglou, G ^a,b   Van T Erve, O M J ^a   Thompson, P E ^a   Jonker, B T ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF CRETE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL SPIN INJECTION; ELECTRON SPIN POLARIZATION; HETEROSTRUCTURES; LOWER BOUNDS; RATE-EQUATION ANALYSIS; SI(0 0 1); SINGLE-STEP; SPIN-POLARIZED ELECTRONS; SPIN-POLARIZED TUNNELING; TRANSPORT MEASUREMENTS; TRANSPORT MECHANISM; TUNNEL BARRIER; TUNNELING SPIN POLARIZATION;

CONTROL THEORY; HETEROJUNCTIONS; RARE EARTH ALLOYS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPIN POLARIZATION; TUNNELING (EXCAVATION); WIND TUNNELS;

SPIN DYNAMICS;

EID: 70350728373     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3254228     Document Type: Article

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