High photocarrier mobility in ultrafast ion-irradiated In 0.53Ga0.47As for terahertz applications

Journal of Physics D: Applied Physics

Volumn 42, Issue 19, 2009, Pages

  Delagnes, J C ^a   Mounaix, P ^a   Nemec H ^b   Fekete, L ^b   Kadlec, F ^b   Kuzel P ^b   Martin, M ^c   Mangeney, J ^c  

^a UMR 5798   (France)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; ENERGY GAP; GALLIUM ARSENIDE; HEAVY IONS; III-V SEMICONDUCTORS; OPTICAL PUMPING; SEMICONDUCTOR ALLOYS; TEMPERATURE; TERAHERTZ SPECTROSCOPY;

ELECTRON DYNAMICS; ELECTRON LIFETIME; IRRADIATION DOSE; LOW-TEMPERATURE-GROWN GAAS; PHOTOEXCITED ELECTRONS; TERAHERTZ APPLICATIONS; TERAHERTZ PROBES; TRANSIENT CONDUCTIVITY;

INDIUM ALLOYS;

EID: 70350626736     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/19/195103     Document Type: Article

References (27)

1. Uhd Jepsen P, Jacobsen R H and Keiding S R 1996 J. Opt. Soc. Am. B 13 2424
2. Mangeney J, Joulaud L, Crozat P, Lourtioz J-M and Decobert J 2003 Appl. Phys. Lett. 83 5551
3. Suzuki M and Tonouchi M 2005 Appl. Phys. Lett. 86 051104
4. Takazato A, Kamakura M, Matsui T, Kitagawa J and Kadoya Y 2007 Appl. Phys. Lett. 90 101119
5. Carmody C, Tan H H, Jagadish C, Gaarder A and Marcinkiviius S 2003 Appl. Phys. Lett. 82 3913
6. Azad A K, Prasankumar R P, Talbayev D, Taylor A J, Averitt R D, Zide J M O, Lu H, Gossard A C and O'Hara J F 2008 Appl. Phys. Lett. 93 121108
7. Mangeney J, Chimot N, Meignien L, Zerounian N, Crozat P, Blary K, Lampin J F and Mounaix P 2007 Opt. Express 15 8943
8. Mangeney J and Crozat P 2008 C. R. Phys. 9 142
9. Chimot N, Mangeney J, Joulaud L, Crozat P, Bernas H, Blary K and Lampin J F 2005 Appl. Phys. Lett. 87 193510
10. Chimot N, Mangeney J, Mounaix P, Tondusson M, Blary K and Lampin J F 2006 Appl. Phys. Lett. 89 083519
11. Nmec H, Fekete L, Kadlec F, Kuel P, Martin M, Mangeney J, Delagnes J C and Mounaix P 2008 Phys. Rev. B 78 235206
12. Hegmann F A, Ostroverkhova O and Cooke D G 2006 Probing organic semiconductors with terahertz pulses Photophysics of Molecular Materials (New York: Wiley) chapter 7 pp 367-428
13. Biersack J P and Haggmark L G 1980 Nucl. Instrum. Methods 174 257
14. Joulaud L, Mangeney J, Lourtioz L M, Crozat P and Patriarche G 2003 Appl. Phys. Lett. 82 856
15. Joulaud L, Mangeney J, Chimot N, Crozat P, Fishman G and Bourgoin J C 2005 J. Appl. Phys. 97 63515
16. Mangeney J, Stelmakh N, Aniel F, Boucaud P and Lourtioz J-M 2002 Appl. Phys. Lett. 80 4711
17. Fekete L, Kuel P, Nmec H, Kadlec F, Dejneka A, Stuchlík J and Fejfar A 2009 Phys. Rev. B 79 115306
18. Nmec H, Kadlec F and Kuel P 2002 J. Chem. Phys. 117 8454-66
19. Levinshtein M, Rumyantsev S and Shur M (ed) 1999 Handbook Series on Semiconductor Parameters vol 2 (Singapore: World Scientific)
20. Stanton C J and Bailey D W 1992 Phys. Rev. B 45 8369
21. Ralph S E, Chen Y, Woodall J and McInturff D 1996 Phys. Rev. B 54 5568
22. Beard M C, Turner G M and Schmuttenmaer C A 2000 Phys. Rev. B 62 15764
23. Nmec H, Kadlec F, Kadlec C, Kuel P and Jungwirth P 2005 J. Chem. Phys. 122 104504
24. Lui K P H and Hegmann F A 2003 J. Appl. Phys. 93 9012
25. Nmec H, Pashkin A, Kuel P, Khazan M, Schnüll S and Wilke I 2001 J. Appl. Phys. 90 1303-6
26. Gupta S, Frankel M Y, Valdmanis J A, Whitaker J F, Mourou G A, Smith F W and Calawa A R 1991 Appl. Phys. Lett. 59 3276
27. Zielinski E, Schweizer H, Streubel K, Eisele H and Weimann G 1986 J. Appl. Phys. 59 2196