Magnetoresistance properties of planar-type tunnel junctions with ferromagnetic nanogap system fabricated by electromigration method

IEEE Transactions on Magnetics

Volumn 45, Issue 10, 2009, Pages 3480-3483

  Tomoda, Yusuke ^a   Takahashi, Keisuke ^a   Hanada, Michinobu ^a   Kume, Watari ^a   Itami, Soichiro ^a   Watanabe, Takato ^a   Shirakashi, Jun Ichi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Electromigration; Ferromagnetic tunnel junction; Magnetoresistance; Nanogap

Indexed keywords

CHEMICAL ACTIVATION; ELECTROMIGRATION; FABRICATION; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETORESISTANCE; NANOSTRUCTURES; TUNNELLING MAGNETORESISTANCE;

ACTIVATION TECHNIQUES; FERROMAGNETIC TUNNEL JUNCTION; MAGNETORESISTANCE PROPERTIES; NANO-GAP; NANOCONSTRICTIONS; NANOGAPS; PLANAR TYPES; VACUUM BARRIERS;

TUNNEL JUNCTIONS;

EID: 70350594721     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2009.2024889     Document Type: Article

References (20)

1. J. Shirakashi and Y. Takemura, "RC-coupled ferromagnetic single- electron transistors," J. Appl. Phys., vol.93, pp. 6873-6875, 2003.
2. Y. Tomoda, Y. Shibata, J. Shirakashi, and Y. Takemura, "Magnetoresistance effect of planar-type ferromagnetic tunnel junctions," J. Appl. Phys., vol.99, pp. 08T312-, 2006.
3. Y. Tomoda, S. Kayashima, T. Ogino, M. Motoyama, Y. Takemura, and J. Shirakashi, "Planar-type ferromagnetic tunnel junctions fabricated by SPM local oxidation," J. Magn. Magn. Mater., vol.310, pp. e641-e643, 2007.
4. H. Park, A. K. L. Lim, J. Park, A. P. Alivisatos, and P. L. McEuen, "Fabrication of metallic electrodes with nanometer separation by electromigration," Appl. Phys. Lett., vol.75, pp. 301-303, 1999.
5. S. I. Khondaker and Z. Yao, "Fabrication of nanometer-spaced electrodes using gold nanoparticles," Appl. Phys. Lett., vol.81, pp. 4613-4615, 2002.
6. K. Tsukagoshi, E. Watanabe, I. Yagi, and Y. Aoyagi, "The formation of nanometer-scale gaps by electrical degradation and their application to C60 transport measurements," Microelectron. Eng., vol.73-74, pp. 686-688, 2004.
7. K. I. Bolotin, F. Kuemmeth, A. N. Pasupathy, and D. C. Ralph, "Metal- nanoparticle single-electron transistors fabricated using electromigra- tion," Appl. Phys. Lett., vol.84, pp. 3154-3156, 2004.
8. D. R. Strachan, D. E. Smith, D. E. Johnston, T.-H. Park, M. J. Therien, D. A. Bonnell, and A. T. Johnson, "Controlled fabrication of nanogaps in ambient environment for molecular electronics," Appl. Phys. Lett., vol.86, pp. 043109-, 2005.
9. G. Esen and M. S. Fuhrer, "Temperature control ofelectromigration to form gold nanogap junctions," Appl. Phys. Lett., vol.87, pp. 263101-, 2005.
10. R. Hoffmann, D. Weissenberger, J. Hawecker, and D. Stöffler, "Conductance of gold nanojunctions thinned by electromigration," Appl. Phys. Lett., vol.93, pp. 043118-, 2008.
11. Z. K. Keane, L. H. Yu, and D. Natelson, "Magnetoresistance ofatomic- scale electromigrated nickel nanocontacts," Appl. Phys. Lett., vol.88, pp. 062514-, 2006.
12. K. Takahashi, Y. Tomoda, S. Itami, and J. Shirakashi, "Control of channel resistance on metal nanowires by electromigration patterning method," J. Vac. Sci. Technol. B, vol.27, pp. 805-809, 2009.
13. S. Kayashima, K. Takahashi, M. Motoyama, and J. Shirakashi, "Control of tunnel resistance of nanogaps by field-emission-induced electromigration, " Jpn. J. Appl. Phys., vol.46, no.37, pp. L907-L909, 2007.
14. S. Kayashima, K. Takahashi, M. Motoyama, and J. Shirakashi, "Wide- range control of tunnel resistance on metallic nanogaps using migration," J. Phys. Conf. Ser., vol.100, p. 052022, 2008.
15. Y. Tomoda, K. Takahashi, M. Hanada, W. Kume, and J. Shirakashi, "Fabrication of nanogap electrodes by field-emission-induced electro- migration," J. Vac. Sci. Technol. B, vol.27, pp. 813-816, 2009.
16. OOMMF (Object Oriented MicroMagnetic Framework) NIST [Online]. Available: http://math.nist.gov/oommf/
17. J. G. Simmons, "Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film," J. Appl. Phys., vol.34, pp. 1793-1803, 1963.
18. K. I. Bolotin, F. Kuemmeth, A. N. Pasupathy, and D. C. Ralph, "Fromballistic transport to tunneling in electromigrated ferromagnetic breakjunctions," Nano Lett., vol.6, pp. 123-127, 2006.
19. J. Shirakashi and Y. Takemura, "Tunnel magnetoresistance on ferromagnetic single-electron transistors with multiple tunnel junction," J. Appl. Phys., vol.89, pp. 7365-7367, 2001. (Pubitemid 33663174)
20. M. Julliere, "Tunneling between ferromagnetic films," Phys. Lett. A, vol.54, pp. 225-226, 1975.