The formation of nanometer-scale gaps by electrical degradation and their application to C60 transport measurements

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 686-688

  Tsukagoshi, K ^a   Watanabe, E ^a,b   Yagi, I ^a,b   Aoyagi, Y ^a,b  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

C60 nanocrystal; Electric degradation; Fullerene; Nanogap; Nanomaterial transport

Indexed keywords

CARBON; CHARGE TRANSFER; COULOMB BLOCKADE; DEGRADATION; ELECTRIC RESISTANCE; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; EVAPORATION; OPTIMIZATION; OXYGEN; SCANNING ELECTRON MICROSCOPY;

C60 NANOCRYSTALS; ELECTRIC DEGRADATION; NANOGAPS; NANOMATERIAL TRANSPORT;

NANOTECHNOLOGY;

EID: 2542495428     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00186-8     Document Type: Conference Paper

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