Probing the local temperature by in situ electron microscopy on a heated Si3N4 membrane

Ultramicroscopy

Volumn 110, Issue 1, 2009, Pages 61-66

  Reguer, A ^a   Bedu, F ^a   Nitsche, S ^a   Chaudanson, D ^a   Detailleur, B ^a   Dallaporta, H ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Crystallization; Focused ion beam; In situ heating SEM and TEM; Nanoscale thermal properties

Indexed keywords

CRYSTALLIZATION; FOCUSED ION BEAMS; GOLD NANOPARTICLES; HEATING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HIGH TEMPERATURE OPERATIONS; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

FOCUSED ION BEAM INDUCED DEPOSITION; IN-SITU ELECTRON MICROSCOPY; LOCALIZED HEATING; NANO SCALE; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; SEM AND TEM; SILICON NANOWIRES; TEMPERATURE PROFILES;

NITROGEN COMPOUNDS;

GOLD NANOPARTICLE; NANOWIRE; NITROGEN DERIVATIVE; SILICON; SILICON DERIVATIVE; TUNGSTEN;

ARTICLE; ARTIFICIAL MEMBRANE; CRYSTALLIZATION; ELECTRICITY; EVAPORATION; HEAT TOLERANCE; HEAT TRANSFER; HEATING; SCANNING ELECTRON MICROSCOPY; STATISTICAL MODEL; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 70350584817     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2009.09.006     Document Type: Article

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