Top-down prepared silicon nanocrystals and a conjugated polymer-based bulk heterojunction: Optoelectronic and photovoltaic applications

Acta Materialia

Volumn 57, Issue 20, 2009, Pages 5986-5995

  Švrček, Vladimir ^a   Fujiwara, Hiroyuki ^a   Kondo, Michio ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Blending; Electro optical effects; Nanocrystalline microstructure; Polymer blends

Indexed keywords

AMBIENT CONDITIONS; BULK HETEROJUNCTION; DOPED SILICON; ELECTRON SPIN RESONANCE; ENERGY BANDGAPS; LOW TEMPERATURE PHOTOLUMINESCENCE; MEH-PPV; METHOXY; NANOCRYSTALLINE MICROSTRUCTURE; NON-TOXICITY; P-TYPE; PHOTO-STABILITY; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC DEVICES; POLY-3-HEXYLTHIOPHENE; ROOM TEMPERATURE; SILICON NANOCRYSTALS; SILICON TECHNOLOGIES; SURFACTANT-FREE; TOP-DOWN APPROACH; TOPDOWN;

BLENDING; BORON; CONJUGATED POLYMERS; DOPING (ADDITIVES); ELECTRON AFFINITY; ELECTROOPTICAL DEVICES; ELECTROOPTICAL EFFECTS; EXCITONS; HETEROJUNCTIONS; IONIZATION POTENTIAL; MICROSTRUCTURE; NANOCRYSTALLINE MATERIALS; NANOCRYSTALS; PHOSPHORUS; POLYMER BLENDS; POLYMERS; QUANTUM CHEMISTRY; SPIN DYNAMICS; SURFACE ACTIVE AGENTS; TRANSPORT PROPERTIES;

SILICON;

EID: 70350543775     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2009.08.025     Document Type: Article

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