Study of electrical and optical properties of Zr-doped ZnO thin films prepared by dc reactive magnetron sputtering

Advanced Materials Research

Volumn 67, Issue , 2009, Pages 161-166

  Yadav, Satyesh Kumar ^a   Vyas, Satya ^a   Chandra, Ramesh ^a   Chaudhary, G P ^a   Nath, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY ROORKEE   (India)

Author keywords

Magnetron sputtering; Transparent conducting oxide; ZnO

Indexed keywords

DC REACTIVE MAGNETRON SPUTTERING; DOPED ZNO; ELECTRICAL AND OPTICAL PROPERTIES; HALF CYCLE; HEXAGONAL STRUCTURES; LOW RATES; METAL TARGET; OPTIMUM FLOW; OXYGEN PARTIAL PRESSURE; POLYCRYSTALLINE; PREFERRED ORIENTATIONS; RADIO FREQUENCIES; RADIO FREQUENCY MAGNETRON SPUTTERING; RESEARCH GROUPS; SPUTTERING POWER; SYNTHESIS PROCESS; TRANSPARENT CONDUCTING OXIDE; VISIBLE RANGE; ZNO; ZR DOPED;

ARGON; ELECTRIC PROPERTIES; MAGNETRON SPUTTERING; MAGNETRONS; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; OXYGEN; POWDER METALS; RADIO; RADIO WAVES; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS; ZINC; ZIRCONIUM; ZIRCONIUM ALLOYS;

ZINC OXIDE;

EID: 70350499001     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.67.161     Document Type: Conference Paper

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