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Volumn 95, Issue 16, 2009, Pages

Dynamics of free carrier absorption in InN layers

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; BAND GAPS; CARRIER DENSITY; CARRIER DYNAMICS; DECAY RATE; DENSITY-DEPENDENT; DIFFERENTIAL TRANSMISSION; FEMTOSECONDS; FREE CARRIER ABSORPTION; INDUCED ABSORPTION; INN LAYERS; NON-EQUILIBRIUM CARRIERS; RECOMBINATION MECHANISMS; SPECTRAL RANGE;

EID: 70350413252     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3251077     Document Type: Article
Times cited : (10)

References (14)
  • 5
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    • Ultrafast hot electron relaxation time anomaly in InN epitaxial films
    • DOI 10.1063/1.2751110
    • T. -R. Tsai, C. -F. Chang, and S. Gwo, Appl. Phys. Lett. 0003-6951 90, 252111 (2007). 10.1063/1.2751110 (Pubitemid 47141210)
    • (2007) Applied Physics Letters , vol.90 , Issue.25 , pp. 252111
    • Tsai, T.-R.1    Chang, C.-F.2    Gwo, S.3
  • 12
    • 30144433397 scopus 로고    scopus 로고
    • Recombination mechanism of photoluminescence in InN epilayers
    • DOI 10.1016/j.ssc.2005.11.013, PII S003810980500921X
    • S. P. Fu, Y. F. Chen, and K. Tan, Solid State Commun. 0038-1098 137, 203 (2006). 10.1016/j.ssc.2005.11.013 (Pubitemid 43052836)
    • (2006) Solid State Communications , vol.137 , Issue.4 , pp. 203-207
    • Fu, S.P.1    Chen, Y.F.2    Tan, K.3
  • 13
    • 0000120914 scopus 로고    scopus 로고
    • 0021-8979,. 10.1063/1.368024
    • J. Linnros, J. Appl. Phys. 0021-8979 84, 275 (1998). 10.1063/1.368024
    • (1998) J. Appl. Phys. , vol.84 , pp. 275
    • Linnros, J.1
  • 14
    • 0345842854 scopus 로고
    • 0003-6951,. 10.1063/1.98086
    • P. T. Landsberg, Appl. Phys. Lett. 0003-6951 50, 745 (1987). 10.1063/1.98086
    • (1987) Appl. Phys. Lett. , vol.50 , pp. 745
    • Landsberg, P.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.