Single ZnO nanowire based high-performance field effect transistors (FETs)

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 10, 2009, Pages 5839-5844

  Park, Yong Kyu ^a   Umar, Ahmad ^a   Kim, Jin Seok ^a   Yang, H Y ^a   Lee, Jeong Su ^a   Hahn, Yoon Bong ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Field effect transistors; Optical and electrical properties; ZnO nanowires

Indexed keywords

AS-GROWN; BACK- AND TOP-GATE; BACK-GATE; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; HEXAGONAL PHASE; NON-CATALYTIC; OPTICAL AND ELECTRICAL PROPERTIES; PEAK TRANSCONDUCTANCE; PHOTOLITHOGRAPHY PROCESS; SINGLE NANOWIRES; STRUCTURAL AND OPTICAL PROPERTIES; TOP-GATE; WURTZITES; ZINC POWDER; ZNO NANOWIRES;

ELECTRIC PROPERTIES; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; MESFET DEVICES; NANOWIRES; OPTICAL PROPERTIES; OXYGEN; SEMICONDUCTING ZINC COMPOUNDS; THERMAL EVAPORATION; ZINC; ZINC OXIDE; ZINC SULFIDE;

FIELD EFFECT TRANSISTORS;

EID: 70350342731     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1252     Document Type: Article

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