Electrical characterization of ZnO single nanowire device for chemical sensor application

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 9, 2008, Pages 4698-4701

  Kim, E K ^a   Lee, H Y ^a   Moon, S E ^a   Park, J ^a   Park, S J ^a   Kwak, J H ^a   Maeng, S ^a   Park, K H ^a   Kim, J ^a   Kim, S W ^b   Ji, H J ^c   Kim, G T ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Kumoh National Institute of Technology   (South Korea)

^c Korea University   (South Korea)

Author keywords

Activation energy; Chemical sensor; Contact resistance; Nanowire device; ZnO

Indexed keywords

AU THIN FILMS; CHEMICAL GAS SENSORS; CONTACT BARRIERS; ELECTRICAL CHARACTERIZATIONS; ELECTRICAL TRANSPORTS; ELEVATED TEMPERATURES; GAN EPILAYERS; GAS RESPONSES; HIGH QUALITIES; HIGH RESOLUTIONS; NANOWIRE DEVICE; OHMIC CURRENTS; OPTICAL LITHOGRAPHIES; PLANE SAPPHIRES; POST PROCESSES; SENSOR APPLICATIONS; SINGLE NANOWIRES; TEMPERATURE DEPENDENTS; VOLTAGE CHARACTERISTICS; ZNO; ZNO NANOWIRES;

ACTIVATION ENERGY; CHEMICAL SENSORS; CORUNDUM; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; GALLIUM NITRIDE; GAS PERMEABLE MEMBRANES; GOLD; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SENSORS; THICK FILMS; ZINC ALLOYS; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

NANOTUBE; NANOWIRE; ZINC; ZINC OXIDE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; CRYSTALLIZATION; ELECTRICITY; ELECTROCHEMISTRY; GENETIC PROCEDURES; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; OPTICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; TEMPERATURE; X RAY DIFFRACTION;

BIOSENSING TECHNIQUES; CRYSTALLIZATION; ELECTRICITY; ELECTROCHEMISTRY; MICROSCOPY, ELECTRON, SCANNING; MODELS, CHEMICAL; NANOTECHNOLOGY; NANOTUBES; NANOWIRES; OPTICS AND PHOTONICS; SEMICONDUCTORS; TEMPERATURE; X-RAY DIFFRACTION; ZINC; ZINC OXIDE;

EID: 55849127796     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.IC65     Document Type: Conference Paper

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