High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 9, 2008, Pages 4557-4560

  Moon, Yeon Keon ^a   Moon, Dae Yong ^a   Lee, Sang Ho ^a   Jeong, Chang Oh ^b   Park, Jong Wan ^a  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Channel layer; DC magnetron sputtering; Oxide semiconductor; Thin film transistor; Transparent; Zinc oxide

Indexed keywords

CHANNEL LAYER; CHANNEL LAYERS; DC MAGNETRON SPUTTERING; FIELD EFFECTS; GATE LEAKAGE CURRENTS; HIGH MOBILITIES; HIGH PERFORMANCE THIN FILM TRANSISTORS; LARGE AREA ELECTRONICS; LOW MOBILITIES; LOW VOLTAGES; ORGANIC SEMICONDUCTORS; OXIDE SEMICONDUCTOR; PHYSICAL AND CHEMICAL PROPERTIES; PLASTIC SUBSTRATES; SEMI-CONDUCTORS; SPUTTERING METHODS; STATE CURRENTS; TRANSPARENT; UNIT CELLS; ZNO THIN FILMS;

ABS RESINS; CHEMICAL PROPERTIES; ELECTRIC CONDUCTIVITY; LEAKAGE CURRENTS; MAGNETRONS; METALLIC FILMS; OPTICAL FILMS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SOLIDS; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; ZINC; ZINC ALLOYS; ZINC OXIDE;

MAGNETRON SPUTTERING;

EID: 55849100742     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.IC24     Document Type: Conference Paper

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