Optical filters utilizing ion implanted Bragg gratings in SOI waveguides

Advances in Optical Technologies

Volumn , Issue , 2008, Pages

  Bulk, M P ^a   Knights, A P ^a   Jessop, P E ^a   Waugh, P ^b   Loiacono, R ^b   Mashanovich, G Z ^b   Reed, G T ^b   Gwilliam, R M ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70350279000     PISSN: 16876393     EISSN: 16876407     Source Type: Journal    
DOI: 10.1155/2008/276165     Document Type: Article

References (23)

1. 2," IEEE Journal of Quantum Electronics, vol. 27, no. 8, pp. 1971-1974, 1991. (Pubitemid 21690119)
2. S. P. Pogossian, L. Vescan, and A. Vonsovici, "The single-mode condition for semiconductor rib waveguides with large cross section," Journal of Lightwave Technology, vol. 16, no. 10, pp. 1851-1853, 1998. (Pubitemid 128620446)
3. J. D. B. Bradley, P. E. Jessop, and A. P. Knights, " Siliconwaveguide- integrated optical power monitor with enhanced sensitivity at 1550 nm," Applied Physics Letters, vol. 86, no. 24, Article ID 241103, 3 pages, 2005.
4. D. Taillaert, P. Bienstman, and R. Baets, "Compact efficient broadband grating coupler for silicon-on-insulator waveguides," Optics Letters, vol. 29, no. 23, pp. 2749-2751, 2004.
5. P. D. Trinh, S. Yegnanarayanan, F. Coppinger, and B. Jalali, "Silicon-on-insulator (SOI) phased-array wavelength multi/demultiplexer with extremely low-polarization sensitivity," IEEE Photonics Technology Letters, vol. 9, no. 7, pp. 940- 942, 1997. (Pubitemid 127566569)
6. G. N. Pearson and P. E. Jessop, "Silicon-on-insulator interferometric strain sensor," in Photonics Packaging and Integration III, vol. 4997 of Proceedings of SPIE, pp. 242-249, San Jose, Calif, USA, January 2003.
7. H. Nishihara, M. Haruna, and T. Suhara, Optical Integrated Circuits, McGraw-Hill, New York, NY, USA, 1989.
8. A. Cutolo, M. Iodice, A. Irace, P. Spirito, and L. Zeni, "An electrically controlled Bragg reflector integrated in a rib silicon on insulator waveguide," Applied Physics Letters, vol. 71, no. 2, pp. 199-201, 1997. (Pubitemid 127650502)
9. S. Honda, Z. Wu, J. Matsui, et al., "Largely-tunable wideband Bragg gratings fabricated on SOI rib waveguides employed by deep-RIE," Electronics Letters, vol. 43, no. 11, pp. 630-631, 2007. (Pubitemid 46793939)
10. D. J.Moss, V. G. Ta'eed, B. J. Eggleton, et al., "Bragg gratings in silicon-on-insulator waveguides by focused ion beam milling," Applied Physics Letters, vol. 85, no. 21, pp. 4860-4862, 2004. (Pubitemid 40715153)
11. T. E. Murphy, J. T. Hastings, and H. I. Smith, "Fabrication and characterization of narrow-band Bragg-reflection filters in silicon-on-insulator ridge waveguides," Journal of Lightwave Technology, vol. 19, no. 12, pp. 1938-1942, 2001. (Pubitemid 34069207)
12. G. T. Reed and A. P. Knights, Silicon Photonics: An Introduction, JohnWiley % Sons, Chichester, UK, 2004.
13. J. E. Fredrickson, C. N. Waddell, W. G. Spitzer, and G. K. Hubler, "Effects of thermal annealing on the refractive index of amorphous silicon produced by ion implantation," Applied Physics Letters, vol. 40, no. 2, pp. 172-174, 1982.
14. Y.Dong, M. Chen, J. Chen, X. Wang, and X. Wang, "Comparative study of SoI/Si hybrid substrates fabricated using highdose and low-dose oxygen implantation," Journal of Physics D, vol. 37, no. 13, pp. 1732-1735, 2004.
15. K. Kajiyama, "Buried-oxide layer formation by high dose oxygen ion implantation into Si wafers: SIMOX (separation by implanted oxygen)," Applied Surface science, vol. 85, pp. 259- 264, 1995.
16. A. G. Revesz and H. L. Hughes, "Properties of the buried oxide layer in SIMOX structures," Microelectronic Engineering, vol. 36, no. 1-4, pp. 343-350, 1997. (Pubitemid 127414800)
17. Y. Li, C. D. Marsh, A. Nejim, R. J. Chater, J. A. Kilner, and P. L. F. Hemment, "SIMOX: processing, layer parameters design, and defect control," Nuclear Instruments and Methods in Physics Research B, vol. 99, no. 1-4, pp. 479-483, 1995.
18. L. Pelaz, L. A. Marqués, and J. Barbolla, "Ion-beam-induced amorphization and recrystallization in silicon," Journal of Applied Physics, vol. 96, no. 11, pp. 5947-5976, 2004. (Pubitemid 40715230)
19. M. J.A. deDood, A. Polman, T. Zijlstra, and E.W. J.M. vander Drift, "Amorphous silicon waveguides for microphotonics," Journal of Applied Physics, vol. 92, no. 2, pp. 649-653, 2002.
20. L.A.Christel, J. F. Gibbons, and T.W. Sigmon, "Displacement criterion for amorphization of silicon during ion implantation," Journal of Applied Physics, vol. 52, no. 12, pp. 7143-7146, 1981. (Pubitemid 12456815)
21. W. P. Maszara and G. A. Rozgonyi, "Kinetics of damage production in silicon during self-implantation," Journal of Applied Physics, vol. 60, no. 7, pp. 2310-2315, 1986.
22. A. Yariv, Introduction to Optical Electronics, Holt, Rinehart and Winston, New York, NY, USA, 1976.
23. A. P. Knights and G. F. Hopper, "Effect of ion implantation induced defects on optical attenuation in silicon waveguides," Electronics Letters, vol. 39, no. 23, pp. 1648-1649, 2003.