Synthesis of nanocrystalline silicon thin films using the Increase of the deposition pressure in the hot-wire chemical vapour deposition technique

South African Journal of Science

Volumn 105, Issue 7-8, 2009, Pages 290-293

  Halindintwali, S ^a   Knoesen, D ^a   Swanepoel, R ^a   Julies, B A ^a   Arendse, C ^a   Muller, T ^a   Theron, C C ^b   Gordijn, A ^c   Bronsveld, P C P ^c   Rath, J K ^c   Schropp, R E I ^c  

^a UNIVERSITY OF THE WESTERN CAPE   (South Africa)

^b MATERIALS RESEARCH GROUP   (South Africa)

^c UTRECHT UNIVERSITY   (Netherlands)

Author keywords

Absorption coefficient; Degradation measurements; Hot wire deposition; Intrinsic; Photoresponse; Stability

Indexed keywords

ABSORPTION COEFFICIENT; CRYSTALLOGRAPHY; DEGRADATION; INFRARED SPECTROSCOPY; NANOTECHNOLOGY; OPTICAL METHOD; RAMAN SPECTROSCOPY; SCATTERING; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION;

EID: 70350173287     PISSN: 00382353     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (24)

1. Wiesmann H., GoshA. K., McMahonT. and Strongin M. (1979). a-Si:H produced by high-temperature thermal decomposition of silane. J. Appl. Phys. 50, 3752-3754.
2. Matsumura H. (1986). Catalytic chemical vapor deposition (CTL-CVD) method producing high quality hydrogenated amorphous silicon. Jpn. J. Appl. Phys. 25, L949-L951.
3. Matsumura H., Masuda A. and Umemoto H. (2006). Present status and future feasibility for industrial implementation of Cat-CVD (hot-wire CVD) technology. Thin Solid Films 501, 58-60.
4. Mahan A. H., Carapella J., Nelson B. P., Crandall R. S. and Balberg I. (1991). Deposition of device quality, low H content amorphous silicon. J. Appl. Phys. 69, 6728-6730.
5. Bauer S., Herbst W., Schröder B. and Oechsner H. (1997). a-Si:H solar cells using the hot-wire technique - how to exceed efficiencies of 10%. In Proceedings, 26th IEEE Photovoltaic Specialists Conference, Anaheim, CA, pp. 719-722. IEEE Conference Publishing Services, Anaheim.
6. Jadkar S. R., Sali J. V., Kshirisagar S. T. and Takwale M. G. (2003). Deposition of hydrogenated amorphous silicon (a-Si:H) films by hot wire chemical vapour deposition: role of the filament temperature. Thin Solid Films 437, 18-24.
7. Fonrodona M., Soler D., Escaré J., Villar F., Bertomeu J., Andreu J., Saboundji A., Coulon N. and Mohammed-Brahim T. (2006). Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by hot-wire CVD on glass substrate. Thin Solid Films 501, 303-306.
8. Klein S., Finger F., Carius R. and Lossen J. (2006). Improved deposition rates for μc-Si:H at low substrate temperature. Thin Solid Films 501, 43-46. (Pubitemid 43242989)
9. Halindintwali S., Knoesen D., Swanepoel R., Julies B. A., Arendse C., Muller T., Theron C. C., Gordijn A., Bronsveld P. C. P., Rath J. K. and Schropp R. E. I. (2007). Improved stability of intrinsic nanocrystalline Si thin films deposited by hot-wire chemical vapour deposition technique. Thin Solid Films 515, 8040-3044.
10. Knoesen D., Arendse C., Halindintwali S. and Muller T. (2007). Extension of the lifetime of tantalum filament in the hot-wire (Cat) chemical vapor deposition process. Thin Solid Films 516, 822-825.
11. Swanepoel R. (1984). Determination of surface roughness and optical constants of inhomogeneous amorphous silicon films. J. Phys. E: Sri. Instrum. 17, 896-903.
12. Veeco Instruments Inc. (2002). Dektak 6M Manual, Software Version 8.30.005, 119.
13. Bustarret E., Hachicha M. A. and Brunei M. (1988). Experimental determination of nanocrystalline volume fraction in silicon thin films from Raman spectroscopy. Appl. Phys. Lett. 52, 1675-1677.
14. Ouwens J. D. (1995). Characterization and applications of wide band gap amorphous silicon, pp. 28-29. Ph. D. thesis, Utrecht University, the Netherlands.
15. Markvart T. (2000). Solar Electricity, chap. 2, pp. 8-9. John Wiley & Sons, Chichester.
16. Britton D. T., Sigcau Z., Comrie CM., Kanguwe D. F., Minani E., Knoesen D. and Härting M. (2003). Light induced changes in the defect structure of a-Si:H. Thin Solid Films 430, 149-152
17. Brogueira P., Conde J. P., Arekat S. and Chu V. (1996). Amorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition at filament temperatures between 1500 and 1900°C. J. Appl. Phys. 79, 8748-8760.
18. Feenstra K. F. (1998). Hot-wire chemical vapour deposition of amorphous silicon and the application in solar cells, pp. 54-55. Ph. D. thesis, Utrecht University, the Netherlands.
19. Halindintwali S., Knoesen D., Muller T. F. G., Adams D., Tile N., Theron C. C. and Schropp R. E. I. (2007). Optical characterization of a-Si:H and nc-Si:H thin films using the transmission spectrum alone. J. Mater. Sci: Mater. Electron. 18, S225-S229.
20. 4 by rf glow discharge method. J. Phys. D: Appl. Phys. 29, 1636-1640.
21. Halindintwali S. (2005). A study of hydrogenated nanocrystalline silicon thin films by hot-wire chemical vapour deposition (HWCVD), p. 20. Ph. D. thesis, University of the Western Cape, South Africa.
22. Schropp R. E. I, and Zeman M. (1998). Amorphous and Microcrystalline Silicon Solar Cells: Modelling, Materials and Device Technology, chap. 3, pp. 46-47. Kluwer Academic Publishers, Massachusetts.
23. Souffi N., Bauer G. H. and Bruggemann R. (2006). Study of metastabilities in microcrystalline silicon films by photoconductivity techniques. Thin Solid Films 501, 129-132.
24. Das C. and Ray S. (2002). Onset of microcrystallinity in silicon thin films. Thin Solid Films 403-404, 81-85.