Low-temperature growth of microcrystalline silicon using 100% SiH4 by rf glow discharge method

Journal of Physics D: Applied Physics

Volumn 29, Issue 6, 1996, Pages 1636-1640

  Jayatissa, Ahalapitiya Hewage ^a   Hatanaka, Yoshinori ^a   Nakanishi, Yoichiro ^a   Ishikawa, Kenji ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CATHODES; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRIC REACTORS; FILM GROWTH; GLOW DISCHARGES; ION BOMBARDMENT; LOW TEMPERATURE PROPERTIES; OPTICAL PROPERTIES; SILANES; SUBSTRATES;

CAPACITIVELY COUPLED PARALLEL PLATE; LOW TEMPERATURE GROWTH; MICROCRYSTALLINE SILICON; OPTOELECTRONIC PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RADIO FREQUENCY GLOW DISCHARGE REACTOR; SURFACE CRYSTALLINITY;

AMORPHOUS FILMS;

EID: 0030168702     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/6/033     Document Type: Article

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