Luminescence and structure of ZnO-ZnS thin films prepared by oxidation of ZnS films in air and water vapor

Journal of Luminescence

Volumn 129, Issue 12, 2009, Pages 1677-1681

  Kryshtab, T ^a   Khomchenko, V S ^b   Andraca Adame, J A ^a   Savin, A K ^b   Kryvko, A ^a   Juarez G ^c   Pena Sierra R ^c  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c Ingenieria Electrica (SEES)   (Mexico)

Author keywords

Photoluminescence; Thermal oxidation; X ray diffraction; ZnO; ZnS

Indexed keywords

EFFECT OF WATER; ELECTRON BEAM EVAPORATION; GLASS SUBSTRATES; GREEN EMISSIONS; HIGH ENERGY; INTENSITY RATIO; LOW-ENERGY BAND; LUMINESCENT PROPERTY; PHOTO-LUMINESCENT SPECTRUM; PHOTOLUMINESCENT SPECTRA; PREPARATION CONDITIONS; ROOM TEMPERATURE; THERMAL OXIDATION; THERMAL OXIDIZATION; WURTZITE STRUCTURE; ZNO; ZNS; ZNS FILMS; ZNS THIN FILMS;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; BAND STRUCTURE; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRON BEAMS; EMISSION SPECTROSCOPY; FILM PREPARATION; LIGHT; OXIDATION; PHASE TRANSITIONS; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SULFIDE MINERALS; WATER VAPOR; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

ZINC SULFIDE;

EID: 70350009881     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2009.04.069     Document Type: Article

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