Modeling and characterization of sacrificial polysilicon etching using vapor-phase xenon difluoride

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2004, Pages 737-740

  Brazzle, John D ^a   Dokmeci, Mehmet R ^a   Mastrangelo, Carlos H ^a  

^a Corning IntelliSense Corporation ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; DIFFUSION; DRY ETCHING; EPITAXIAL GROWTH; ION BOMBARDMENT; LITHOGRAPHY; MATHEMATICAL MODELS; OXIDATION; PARAMETER ESTIMATION; PRESSURE EFFECTS; RATE CONSTANTS; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS; XENON;

DIFFUSION TRANSPORT; ETCH RATE; RESIDUAL MOISTURE; SURFACE REACTION;

POLYSILICON;

EID: 3042819309     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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