Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer

Journal of Magnetism and Magnetic Materials

Volumn 322, Issue 1, 2010, Pages 108-111

  Ma, Q L ^a,b   Feng, J F ^a,b   Feng, Gen ^a   Oguz, K ^a   Han, X F ^b   Coey, J M D ^a  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

Elemental diffusion; Inverted and normal tunneling magnetoresistance (TMR); Magnetic tunnel junction (MTJ)

Indexed keywords

ANNEALING EFFECTS; ANNEALING PROCESS; ANNEALING TEMPERATURES; ELEMENTAL DIFFUSION; EXCHANGE BIAS; HIGH-T; INVERTED AND NORMAL TUNNELING MAGNETORESISTANCE (TMR); MAGNETIC TUNNEL JUNCTION; MAGNETIC TUNNEL JUNCTION (MTJ); SIGN REVERSAL; SYNTHETIC ANTIFERROMAGNETS; TUNNELING MAGNETORESISTANCE;

ANNEALING; ANTIFERROMAGNETIC MATERIALS; COBALT COMPOUNDS; DIFFUSION; ELECTRIC RESISTANCE; IRON COMPOUNDS; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANESE; SEMICONDUCTOR JUNCTIONS; TUNNELING (EXCAVATION); TUNNELS; WAVEGUIDE JUNCTIONS; WIND TUNNELS;

TUNNEL JUNCTIONS;

EID: 70349971706     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2009.08.038     Document Type: Article

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