Influence of the pre-treatment anneal on Co-germanide Schottky contacts

Materials Science in Semiconductor Processing

Volumn 11, Issue 5, 2008, Pages 300-304

  Lajaunie, L ^a   David, M L ^a   Pailloux, F ^a   Tromas, C ^a   Simoen, E ^b   Claeys, C ^b,c   Barbot, J F ^a  

^a UNIVERSITÉ DE POITIERS   (France)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Cobalt; Deep level transient spectroscopy; Germanide; Germanium; Oxide

Indexed keywords

COBALT LAYERS; DOUBLE LAYER STRUCTURE; ELECTRON BEAM EVAPORATION; GERMANIDE; GERMANIDES; GERMANIUM SUBSTRATES; IN-SITU CLEANING; INTER-DIFFUSION; ISOLATED ISLANDS; METAL DEPOSITION; NATIVE OXIDES; PRE-TREATMENT; PRE-TREATMENTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; GERMANIUM; SCHOTTKY BARRIER DIODES;

COBALT;

EID: 70349925847     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.09.014     Document Type: Article

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