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Volumn 5216 LNCS, Issue , 2008, Pages 308-319

Evolving variability-tolerant CMOS designs

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE ANALYSIS; GENETIC ALGORITHMS; GENETIC PROGRAMMING;

EID: 70349849800     PISSN: 03029743     EISSN: 16113349     Source Type: Book Series    
DOI: 10.1007/978-3-540-85857-7_27     Document Type: Conference Paper
Times cited : (14)

References (19)
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  • 3
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    • High-performance cmos variability in the 65-nm regime and beyond
    • Bernstein, K., et al.: High-performance cmos variability in the 65-nm regime and beyond. Advanced Silicon Technology 50 (2006)
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  • 5
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    • Salomon, R.1    Sill, F.2
  • 8
    • 55749090482 scopus 로고    scopus 로고
    • Automatic synthesis using GP of both the topology and sizing for five post-2000 patented analog and mixed-analog digital circuits
    • Streeter, M.J., Keane, M.A., Koza, J.R.: Automatic synthesis using GP of both the topology and sizing for .ve post-2000 patented analog and mixed-analog digital circuits. In: Southwest Symposium on Mixed-Signal Design (2003)
    • (2003) Southwest Symposium on Mixed-Signal Design
    • Streeter, M.J.1    Keane, M.A.2    Koza, J.R.3
  • 9
    • 51849143669 scopus 로고    scopus 로고
    • Evolving efficient redundancy by exploiting the analogue nature of CMOS transistors
    • Djupdal, A., Haddow, P.C.: Evolving effcient redundancy by exploiting the analogue nature of CMOS transistors. In: CIRAS (2007)
    • (2007) CIRAS
    • Djupdal, A.1    Haddow, P.C.2
  • 12
    • 0032636539 scopus 로고    scopus 로고
    • Random dopant induced threshold voltage lowering and .uctuations in sub 50 nm mosfets: A statistical 3D 'atomistic' simulation study
    • Asenov, A.: Random dopant induced threshold voltage lowering and .uctuations in sub 50 nm mosfets: a statistical 3D 'atomistic' simulation study. Nanotechnology 10, 153-158 (1999)
    • (1999) Nanotechnology , vol.10 , pp. 153-158
    • Asenov, A.1
  • 13
    • 67650363956 scopus 로고    scopus 로고
    • Variability in the next generation cmos technologies and impact on design
    • Asenov, A.: Variability in the next generation cmos technologies and impact on design. In: International Conference of CMOS Variability (2007)
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    • Asenov, A.1
  • 14
    • 33748937377 scopus 로고    scopus 로고
    • Electronic circuit reliability modeling
    • others
    • Bernstein, J.B., others,: Electronic circuit reliability modeling. Microelectronics Reliability 46, 1957-1979 (2006)
    • (2006) Microelectronics Reliability , vol.46 , pp. 1957-1979
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  • 15
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    • Physically nbased modelling of damage, amorphization, and recrystallization for predictive device-size process simulation
    • Rubio, J., et al.: Physically nbased modelling of damage, amorphization, and recrystallization for predictive device-size process simulation. Materials Science and Engineering B 114-115, 151-155 (2004)
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  • 18
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    • The effect of polysilicon grain boundaries on mos based devices
    • Eccleston, W.: The effect of polysilicon grain boundaries on mos based devices. Microelectronic Engineering 48, 105-108 (1999)
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  • 19
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    • A new crossover technique for cartesian genetic programming
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.