Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 151-155

  Rubio, J E ^a   Jaraiz, M ^a   Martin Bragado, I ^a   Pinacho, R ^a   Castrillo, P ^a   Barbolla, J ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

Crystal amorphous; Implant induced; Transient enhanced diffusion

Indexed keywords

AGGLOMERATION; AMORPHIZATION; AMORPHOUS MATERIALS; ANNEALING; CHEMICAL ACTIVATION; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIFFUSION; MONTE CARLO METHODS; RECRYSTALLIZATION (METALLURGY);

CRYSTAL-AMORPHOUS TRANSITION TEMPERATURE; IMPLANT-INDUCED; PROCESS SIMULATION; TRANSIENT ENHANCED DIFFUSION;

ION IMPLANTATION;

EID: 10644277922     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.039     Document Type: Conference Paper

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