TEM characterization of Si nanowires grown by CVD on Si pre-structured by nanosphere lithography

Materials Science in Semiconductor Processing

Volumn 11, Issue 5, 2008, Pages 169-174

  Lindner, Jörg K N ^a   Bahloul Hourlier, Djamila ^b   Kraus, Daniel ^a   Weinl, Michael ^a   Mélin, Thierry ^b   Stritzker, Bernd ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

Chemical vapour deposition; EFTEM; Nanosphere lithography; Silicon nanowires; TEM; VLS mechanism

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; EFTEM; NANOSPHERE LITHOGRAPHY; SILICON NANOWIRES; TEM; VLS MECHANISM;

ELECTRIC WIRE; GOLD; GOLD COMPOUNDS; GOLD DEPOSITS; LITHOGRAPHY; NANOSPHERES; NANOWIRES; SILICON; SUBSTRATES;

CHEMICAL VAPOR DEPOSITION;

EID: 70349785416     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.09.016     Document Type: Article

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