Charge transition levels of the Ge dangling bond defect at Ge/insulator interfaces

Materials Science in Semiconductor Processing

Volumn 11, Issue 5, 2008, Pages 226-229

  Broqvist, Peter ^a,b   Alkauskas, Audrius ^a,b   Pasquarello, Alfredo ^a,b  

^a EPFL   (Switzerland)

^b INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

Author keywords

Dangling bond defects; Electronic band gaps; Hybrid density functional theory

Indexed keywords

CHARGE NEUTRALITY LEVEL; CORRELATION ENERGY; DEFECT LEVELS; ELECTRON SPIN RESONANCE; ELECTRONIC BAND GAPS; HYBRID DENSITY; HYBRID DENSITY FUNCTIONAL THEORY; TRANSITION LEVEL; VALENCE BAND EDGES;

DEFECT DENSITY; DEFECTS; DENSITY FUNCTIONAL THEORY; ENERGY GAP; GERMANIUM; SPIN DYNAMICS;

DANGLING BONDS;

EID: 70349784299     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.10.010     Document Type: Article

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