Characterization of MOS transistor after through-hole electrode fabrication and 3D-assembly by mechanical caulking

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2009, Pages 360-364

  Kawashita, Michihiro ^a   Yoshimura, Yasuhiro ^a   Tanaka, Naotaka ^a   Shimokawa, Hirohisa ^b   Kinoshita, Nobuhiro ^b   Uematsu, Toshihide ^b   Fujisawa, Masahiko ^b   Naito, Takahiro ^b   Akazawa, Takashi ^b  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

3D PACKAGING; 65-NM-NODE; ALUMINUM ELECTRODES; CHIP-TO-CHIP INTERCONNECTIONS; CONNECTING POINTS; ELECTRICAL INTERCONNECTIONS; ELECTRODE FABRICATION; ELECTRODE STRUCTURE; ETCHING RATE; ETCHING TIME; HIGH PERFORMANCE SYSTEMS; INTERLAYER DIELECTRIC FILMS; METAL LAYER; MOS TRANSISTORS; OVER-ETCHING; PRESSING LOADS; PRODUCTION TOLERANCE; ROOM TEMPERATURE; SATURATION CURRENT; STUD-BUMPS; SYSTEM-IN-PACKAGE APPLICATIONS; TEST ELEMENT GROUPS; THREE-DIMENSIONAL (3D) PACKAGING; THROUGH HOLE; TRANSISTOR CHARACTERISTICS; WIRE BONDING;

ALUMINA; ALUMINUM; BONDING; CHIP SCALE PACKAGES; DIELECTRIC DEVICES; DIELECTRIC FILMS; ELECTRONIC EQUIPMENT MANUFACTURE; ETCHING; FABRICATION; GOLD; MICROPROCESSOR CHIPS; STUDS (STRUCTURAL MEMBERS); TECHNOLOGY; THREE DIMENSIONAL; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; TRANSISTORS; WAFER BONDING; WIRE PRODUCTS;

ELECTRODES;

EID: 70349695889     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2009.5074041     Document Type: Conference Paper

References (5)

1. M. Koyanagi, H. Kurino, K. W. Lee, K. Sakuma, N. Miyakawa, and H. Itani: "Future System-on-Silicon LSI chips " IEEE Micro, Vol.18, No.4, 1998, pp. 17-22.
2. M. Kawano, N. Takahashi, Y. Kurita, K. Soejima, M. Komuro and S. Matsui: "Three-Dimensional Packaging Technology for Stacked DRAM With 3-Gb/s Data Transfer" IEEE Transactions on electron devices, Vol.55, No.7, 2008, pp.1614-1620.
3. K. Hara et al: "Optimization for Chip Stack in 3-D Packaging" IEEE Transactions on advanced packaging, Vol.28, No.3, 2005, pp. 367-375.
4. th Electronic Components and Technology Conf, pp.788-794, 2005.
5. th Electronic Components and Technology Conference, pp. 814-818, 2006. 364. (Pubitemid 44929775)