Novel method for crystal defect analysis of laser drilled TSVs

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2009, Pages 1139-1146

  Rieske, Ralf ^a   Landgraf, René ^a   Wolter, Klaus Jürgen ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTERCONNECTS; ADVANCED PACKAGING; BACK END OF LINES; BASIC PRINCIPLES; CHARACTERIZATION TECHNIQUES; ELECTRONIC PACKAGING; FEMTO-SECOND LASER; HIGH RESOLUTION; LASER DRILLING; LONG TERM EXPOSURE; LOW COSTS; MANUFACTURING TECHNOLOGIES; NONDESTRUCTIVE METHODS; NOVEL METHODS; PACKAGING DENSITY; PULSE WIDTH; SET-UPS; SUB-SURFACE DAMAGE; SYNCHROTRON X RAYS; SYSTEM INTEGRATION; THROUGH SILICON VIAS; TIME COMPARISON; VIA FABRICATION; WHITE BEAMS;

ELECTRONICS PACKAGING; INDUSTRIAL RESEARCH; INTERCONNECTION NETWORKS; LASERS; PACKAGING; PULSED LASER APPLICATIONS; SURFACE DEFECTS; SYNCHROTRONS; TECHNOLOGY; THREE DIMENSIONAL;

CRYSTAL DEFECTS;

EID: 70349693645     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2009.5074155     Document Type: Conference Paper

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