Laser drilled through silicon vias: Crystal defect analysis by synchrotron X-ray topography

Proceedings - 2008 2nd Electronics Systemintegration Technology Conference, ESTC

Volumn , Issue , 2008, Pages 1023-1028

  Landgraf, René ^a   Rieske, Ralf ^a   Danilewsky, Andreas N ^b   Wolter, Klaus Jürgen ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DEFECT STRUCTURES; DRILLING; ENGINEERING GEOLOGY; INTERCONNECTION NETWORKS; LASERS; NETWORKS (CIRCUITS); NONMETALS; PAPER; PAPER CAPACITORS; PULSED LASER APPLICATIONS; QUANTUM OPTICS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SYNCHROTRONS; TECHNOLOGY; THREE DIMENSIONAL;

AT SPEEDS; BOSCH PROCESSES; CHIP TECHNOLOGIES; CIRCUIT PERFORMANCES; CRYSTALLINE SILICONS; DEEP REACTIVE ION ETCHINGS; DEFECT ANALYSES; DESTRUCTIVE METHODS; ELECTRICAL MEASUREMENTS; ELECTRICAL NETWORKS; EXISTING METHODS; FEMTOSECOND LASERS; HIGHER FREQUENCIES; KEY TECHNOLOGIES; LASER DRILLINGS; LOWER COSTS; MICRO-PROCESSORS; POWER CONSUMPTIONS; PULSE WIDTHS; STRUCTURE ANALYSIS; SYNCHROTRON RADIATION SOURCES; THROUGH-SILICON-VIA; THROUGH-SILICON-VIAS; UV LASERS; VARYING PARAMETERS; WAFER STACKING; WHITE BEAMS; WIRE LENGTHS;

SILICON WAFERS;

EID: 58149086227     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESTC.2008.4684492     Document Type: Conference Paper

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