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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 5, 2009, Pages

Effect of sidewall passivation in B Cl3/N2 inductively coupled plasma etching of two-dimensional GaAs photonic crystals

(5) Atlasov, Kirill A a Gallo, Pascal a Rudra, Alok a Dwir, Benjamin a Kapon, Eli a

a EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; INTEGRATED LIGHT SOURCE; OPTICAL CHARACTERIZATION; PLASMA COMPOSITION; QUANTUM WIRES; SIDEWALL PASSIVATION; SURFACE PASSIVATION;

GALLIUM ALLOYS; INDUCTIVELY COUPLED PLASMA; LIGHT; LIGHT SOURCES; PASSIVATION; PLASMA ETCHING; QUANTUM ELECTRONICS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM; TWO DIMENSIONAL;

PHOTONIC CRYSTALS;

EID: 70349669244 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3205004 Document Type: Article

Times cited : (24)

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