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Journal of Materials Science

Volumn 44, Issue 23, 2009, Pages 6416-6422

Effect of interstitial lithium atom on crystal and electronic structure of silicon oxynitride

(5) Liu, Bin a,b Wang, Jingyang a Li, Fangzhi a,b Nian, Hongqiang a,b Zhou, Yanchun a

a INSTITUTE OF METAL RESEARCH (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SITES; BAND GAPS; DIELECTRIC CONSTANTS; EFFECTS OF IMPURITIES; INTERNAL COORDINATES; INTERSTITIAL SITES; LI ATOMS; LITHIUM ATOMS; PLANE WAVE; POLYCRYSTALLINE; PSEUDOPOTENTIALS; SILICON OXYNITRIDES; TOTAL ENERGY METHODS; XRD;

ATOMS; CERAMIC CAPACITORS; CRYSTAL IMPURITIES; DIELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; LITHIUM; SILICON; SILICON NITRIDE; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

CRYSTAL ATOMIC STRUCTURE;

EID: 70349652190 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-009-3885-x Document Type: Article

Times cited : (8)

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