Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 9, 2008, Pages 3048-3050

  Nagamatsu, Kentaro ^a   Okada, Narihito ^a   Kato, Naofumi ^a   Sumii, Takafumi ^a   Bandoh, Akira ^b   Iwaya, Motoaki ^a   Kamiyama, Satoshi ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

^b High Performance Materials Department   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; ATOMIC STEP; C-PLANE SAPPHIRE; FULL WIDTHS AT HALF MAXIMUMS; HIGH TEMPERATURE; METAL-ORGANIC VAPOR PHASE EPITAXY; MIS-ORIENTATION; MISCUT ANGLE; MOVPE; OFF-ANGLE; SAPPHIRE SUBSTRATES; STRUCTURAL QUALITIES; X RAY ROCKING CURVE;

CRYSTAL GROWTH; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SUBSTRATES;

EID: 70349261716     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779226     Document Type: Conference Paper

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