Surface step morphologies of GaN films grown on vicinal sapphire (0 0 0 1) substrates by rf-MBE

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 75-78

  Shen, X Q ^a   Okumura, H ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. Surface structure; A3. Molecular beam epitaxy; B1. Nitride

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SAPPHIRE; SUBSTRATES;

ANISOTROPIC STEP MORPHOLOGIES; ATOMIC-SCALE MODEL; VICINAL ANGLE; VICINAL SAPPHIRE SUBSTRATES;

THIN FILMS;

EID: 33847253839     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.206     Document Type: Article

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