Photoluminescence analysis of {311} interstitial defects in wafers synthesized by separation by implanted oxygen

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 6 A, 2001, Pages

  Takiguchi, Jun Ichi ^a,b   Tajima, Michio ^a   Ogura, Atsushi ^c   Ibuka, Shigeo ^a   Tokumaru, Yozo ^b  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b CHUO UNIVERSITY   (Japan)

^c NEC CORPORATION   (Japan)

Author keywords

Photoluminescence; Rod like defect; Silicon on insulator; SIMOX; SOI; TEM; 311 defect

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; PHOTOLUMINESCENCE; SILICON WAFERS; SPECTROSCOPIC ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

PHOTOLUMINESCENCE (PL) SPECTROSCOPY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035358650     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l567     Document Type: Article

References (17)