MBE growth of ZnSe nanowires on oxidized silicon substrate

Superlattices and Microstructures

Volumn 46, Issue 4, 2009, Pages 572-577

  Hsiao, C H ^a   Chang, S J ^a   Wang, S B ^a   Hung, S C ^b   Chang, S P ^a   Li, T C ^c   Lin, W J ^c   Huang, B R ^d  

^a Center for Micro/Nano Science and Technology   (Taiwan)

^b SHIH CHIEN UNIVERSITY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

MBE; Nanowires; Zinc blende; ZnSe

Indexed keywords

AU-NANOPARTICLES; AVERAGE DIAMETER; AVERAGE LENGTH; CRYSTAL QUALITIES; MBE; MBE GROWTH; OXIDIZED SILICON SUBSTRATES; SI (100) SUBSTRATE; SINGLE-CRYSTALLINE; ZINC-BLENDE; ZNSE; ZNSE NANOWIRES;

CRYSTAL GROWTH; NANOWIRES; SEMICONDUCTING ZINC COMPOUNDS; SILICON OXIDES; SUBSTRATES; ZINC;

ELECTRIC WIRE;

EID: 70349167293     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2009.04.005     Document Type: Article

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