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Volumn 2, Issue 9, 2009, Pages

Control of inter-dot electrostatic coupling by a side gate in a silicon double quantum dot operating at 4.5 K

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STABILITY; ELECTRON TRANSPORT MEASUREMENTS; ELECTROSTATIC COUPLING; PRACTICAL IMPLEMENTATION; QUANTUM INFORMATION DEVICE; SIDE GATE; SILICON DOUBLE QUANTUM DOT; THEORETICAL CALCULATIONS; TOP GATE; TUNABLE COUPLING;

EID: 70349157553     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.095002     Document Type: Article
Times cited : (26)

References (23)
  • 15
    • 70349113259 scopus 로고    scopus 로고
    • C. B. Simmons, M. Thalakulam, B. M. Rosemeyer, B. J. V. Bael, E. K. Sackmann, D. E. Savage, M. G. Lagally, R. Joynt, M. Friesen, S. N. Coppersmith, and M. A. Eriksson: arXiv:0905.1647
    • C. B. Simmons, M. Thalakulam, B. M. Rosemeyer, B. J. V. Bael, E. K. Sackmann, D. E. Savage, M. G. Lagally, R. Joynt, M. Friesen, S. N. Coppersmith, and M. A. Eriksson: arXiv:0905.1647.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.