Investigation of chemical bath deposition of ZnO thin films using six different complexing agents

Journal of Physics D: Applied Physics

Volumn 42, Issue 13, 2009, Pages

  Khallaf, Hani ^a   Chai, Guangyu ^a   Lupan, Oleg ^a,b   Heinrich, Helge ^a   Park, Sanghoon ^a   Schulte, Alfons ^a   Chow, Lee ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION BAND; ARGON AMBIENT; AS-GROWN FILMS; AVERAGE GRAIN SIZE; BAND GAPS; CARRIER DENSITY; CHEMICAL-BATH DEPOSITION; COMPLEXING AGENTS; DIMETHYLAMINES; ETHANOLAMINES; EXCESS OXYGEN; FILM STOICHIOMETRY; HIGH RESOLUTION; MICRO RAMAN SPECTROSCOPY; SMALL VARIATIONS; TRANSMISSION ELECTRON MICROGRAPH; TRIETHANOLAMINES; ZINC HYDROXIDE; ZNO; ZNO FILMS; ZNO THIN FILM;

ABSORPTION SPECTROSCOPY; ANNEALING; ARGON; DEPOSITION; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLIC FILMS; OPTICAL FILMS; OXIDATION; OXYGEN; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SPECTROSCOPIC ANALYSIS; STOICHIOMETRY; THIN FILMS; ZINC; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70349151004     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/13/135304     Document Type: Article

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