Properties of nanocrystalline zinc oxide thin films prepared by thermal decomposition of electrodeposited zinc peroxide

Thin Solid Films

Volumn 516, Issue 12, 2008, Pages 4025-4029

  Han, Xiaofei ^a   Liu, Run ^a,b   Chen, Weixiang ^a   Xu, Zhude ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b State Key Laboratory Base of Novel Functional Materials and Preparation Science   (China)

Author keywords

Electrodeposition; II VI semiconductors; Optical properties; Zinc oxide; Zinc peroxide

Indexed keywords

ELECTRODEPOSITION; PHOTOLUMINESCENCE; PYROLYSIS; THIN FILMS; ZINC OXIDE;

ROOM TEMPERATURE; ZINC PEROXIDE;

NANOCRYSTALLINE MATERIALS;

EID: 40749085110     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.08.006     Document Type: Article

References (36)

1. Kong K.Y., Ding Y., and Yang R. Science 303 (2004) 1348
2. Tian Z.R., Voigt J.A., Liu J., Mckenzie B., McDermott M.J., Rodriguez M.A., Konishi H., and Xu H.F. Nat. Mater. 2 (2003) 821
3. Gao P.X., Ding Y., Mai W.J., Hughes W.L., Lao C.S., and Wang Z.L. Science 309 (2005) 1700
4. Sharma P., Gupta A., Rao K.V., Owens F.J., Sharma R., Ahuja R., Guillen J.M.O., Johansson B., and Gehring G.A. Nat. Mater. 2 (2003) 673
5. Korgel B.A. Science 309 (2005) 1683
6. Wu J.J., and Liu S.C. Adv. Mater. 14 (2002) 215
7. Ryu M.K., Lee S.H., Jang M.S., Panin G.N., and Kang T.W. J. Appl. Phys. 92 (2002) 154
8. Johnson M.A.L., Fujita S., Rowland W.H., Hughes W.C., Cook J.W., and Schetzina J.F. J. Electron. Mater. 25 (1996) 855
9. Sun Y., Fuge G.M., and Ashfold M.N.R. Chem. Phys. Lett. 396 (2004) 21
10. Craciun V., Elders J., Gardeniers J.G.E., and Boyd I.W. Appl. Phys. Lett. 65 (1994) 2963
11. Peulon S., and Lincot D. Adv. Mater. 8 (1996) 166
12. Izaki M., and Omi T. Appl. Phys. Lett. 68 (1996) 2439
13. Kamalasnan M.N., and Chandra S. Thin Solid Films 288 (1996) 112
14. Pal U., and Santiago P. J. Phys. Chem., B 109 (2005) 15317
15. Govender K., Boyle D.S., Kenway P.B., and O'Brien P.J. J. Mater. Chem. 14 (2004) 2575
16. Switzer J.A. Am. Ceram. Soc. Bull. 66 (1987) 1521
17. Therese G.H.A., and Kamath P.V. Chem. Mater. 12 (2000) 1195
18. Chang S.T., Leu I.C., and Hon M.H. Electrochem. Solid-State Lett. 5 (2002) C71
19. Jayakrishnan R., and Hodes G. Thin Solid Films 440 (2003) 19
20. Switzer J.A., Kothari H.M., Poizot P., Nakanishi S., and Bohannan E.W. Nature 425 (2003) 490
21. Liu R., Kulp E.A., Oba F., Bohannan E.W., Ernst F., and Switzer J.A. Chem. Mater. 17 (2005) 725
22. Han X.F., Liu R., Xu Z.D., Chen W.X., and Zheng Y.F. Electrochem. Commun. 7 (2005) 1195
23. 2 is 76-1364 and JCPDS card number of ZnO is 36-1451.
24. In: Lide D.R. (Ed). CRC Handbook of Chemistry and Physics, 84th (2004), CRC Press
25. Goux A., Pauporté T., Chivot J., and Lincot D. Electrochim. Acta 50 (2005) 2239
26. Pauporté T., and Lincot D. J. Electrochem. Soc. 148 (2001) C310
27. Pauporté T., and Lincot D. J. Electroanal. Chem. 517 (2001) 54
28. Uekawa N., Mochizuki N., Kajiwara J., Mori F., Wu Y.J., and Kakegawa K. Phys. Chem. Chem. Phys. 5 (2003) 929
29. Scrikant V., and Clarke D.R. J. Appl. Phys. 83 (1998) 5447
30. Yang C.L., Wang J.W., Ge W.K., Guo L., Yang S.H., and Shen D.Z. J. Appl. Phys. 90 (2001) 4489
31. Huang M.H., Mao S., Feick H., Yan H., Wu Y., Kind H., Weber E., Russo R., and Yang P. Science 292 (2001) 1897
32. Roning C., Cao P.X., Ding Y., Wang Z.L., and Schwen D. Appl. Phys. Lett. 84 (2004) 783
33. Gutowski J., Presser N., and Broser I. Phys. Rev., B 38 (1998) 9746
34. Park W.I., Jun Y.H., Jung S.W., and Yi C. Appl. Phys. Lett. 82 (2003) 964
35. Borgohain K., and Mahamuni S. Semicond. Sci. Technol. 13 (1998) 1154
36. Li L.P., Qiu X.Q., and Li G.H. Appl. Phys. Lett. 87 (2005) 124101