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Volumn 80, Issue 7, 2009, Pages

Transformation of GaAs into an indirect L -band-gap semiconductor under uniaxial strain

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EID: 70249115548     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.073201     Document Type: Article
Times cited : (23)

References (39)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.