Direct evidence by positron annihilation spectroscopy of defect distributions deeper than Rp in Ar+ implanted silica glass

Journal of Physics D: Applied Physics

Volumn 42, Issue 11, 2009, Pages

  Mazzoldi, P ^a   Mattei, G ^a   Ravelli, L ^b,c   Egger, W ^b   Mariazzi, S ^c   Brusa, R S ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^c UNIVERSITY OF TRENTO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DISTRIBUTION; DEFECTIVE LAYERS; DEPTH PROFILE; FLUENCES; IMPLANTATION ENERGIES; NANO-VOIDS; OXYGEN ATOM; PROJECTED RANGE; SILICA GLASS; STRESS GRADIENT;

DEFECTS; GLASS; MAGNESIUM PRINTING PLATES; OXYGEN; POSITRON ANNIHILATION; SILICA;

POSITRON ANNIHILATION SPECTROSCOPY;

EID: 70149113675     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/11/115418     Document Type: Article

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