Porous silicon photonic devices using pulsed anodic etching of lightly doped silicon

Journal of Physics D: Applied Physics

Volumn 42, Issue 14, 2009, Pages

  Escorcia Garcia, J ^a   Sarracino Martinez O ^a   Gracia Jimenez J M ^b   Agarwal, V ^a  

^a UNIVERSIDAD AUTÓNOMA DEL ESTADO DE MORELOS   (Mexico)

^b BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC ETCHING; APPLIED CURRENT; DIRECT CURRENT; DOPED SILICON; DUTY CYCLES; INTERFACE ROUGHNESS; LAYERED SAMPLE; OPTIMIZED PARAMETER; P-TYPE; RUGATE FILTER;

ETCHING; OPTICAL FILTERS; OPTICAL PROPERTIES; PHOTONIC DEVICES; POROUS SILICON; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 70149090816     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/14/145101     Document Type: Article

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