Effect of duty cycle and frequency on the morphology of porous silicon formed by alternating square pulse anodic etching

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 6, 2007, Pages 2039-2043

  Escorcia, J ^a   Agarwal, V ^a  

^a UNIVERSIDAD AUTÓNOMA DEL ESTADO DE MORELOS   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC ETCHING; ANODIZATION TIME; APPLIED SURFACE; DOPED SILICON; DUTY CYCLES; HIGH-RESOLUTION SCANNING ELECTRON MICROSCOPY; OPTIMUM VALUE; SILICON SAMPLES; SQUARE PULSES;

CEMENTS; HIGH RESOLUTION ELECTRON MICROSCOPY; IMAGING TECHNIQUES; NONMETALS; OPTICAL DESIGN; SCANNING; SILICON; SILICON WAFERS; STRUCTURAL OPTIMIZATION; SURFACE ANALYSIS;

POROUS SILICON;

EID: 49749088324     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674361     Document Type: Conference Paper

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