Three level masking for improved aspect ratio inp-based photonic crystals

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2008, Pages

  Karouta, F ^a   Docter, B ^a   Geluk, E J ^a   Smit, M K ^a   Kaspar, P ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b ETH ZURICH   (Switzerland)

Author keywords

Aspect ratio; Cl2 O2; Component; ICP etching; InP; Photonic crystals

Indexed keywords

CL2-O2; COMPONENT; HIGH ASPECT RATIO; ICP ETCHING; INP; MASKING TECHNIQUE; THREE-LEVEL;

CHROMIUM; ETCHING; INDIUM; INDIUM PHOSPHIDE; INDUCTIVELY COUPLED PLASMA; PHOTONIC CRYSTALS; PHOTONICS; PRESSURE DROP; SILICON COMPOUNDS;

ASPECT RATIO;

EID: 70149090669     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2008.4703034     Document Type: Conference Paper

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