Interaction of intense ultrashort xuv pulses with silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7361, Issue , 2009, Pages

  Sobierajski, R ^a,b   Klinger, D ^a   Jurek, M ^a   Pelka J B ^a   Juha, L ^c   Chalupsky, J ^c,d   Cihelka, J ^c   Hajkova, V ^c   Vysin, L ^c   Jastrow, U ^e   Stojanovic, N ^e   Toleikis, S ^e   Wabnitz, H ^e   Krzywinski, J ^f   Hau Riege, S ^g   London, R ^g  

^a INSTITUTE OF PHYSICS   (Poland)

^b FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^c INSTITUTE OF PHYSICS   (Czech Republic)

^d CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^e DESY   (Germany)

^f SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^g LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Ablation; Damage; FEL; Melting; Silicon; XUV

Indexed keywords

BULK SILICON; DAMAGE; FEL; FEMTOSECOND PULSE; INTENSITY-DEPENDENT; KEY ISSUES; PHASE CONTRASTS; SINGLE SHOTS; STRUCTURAL MODIFICATIONS; SURFACE DAMAGES; XUV; XUV OPTICS; XUV PULSE;

ABLATION; ASTRONOMY; ATOMIC FORCE MICROSCOPY; CHEMICAL MODIFICATION; ELECTROMAGNETIC PULSE; FREE ELECTRON LASERS; LASER PULSES; OPTICAL MICROSCOPY; RADIATION DAMAGE; RADIATION DETECTORS; ULTRAVIOLET DEVICES;

CRYSTAL ATOMIC STRUCTURE;

EID: 69949181112     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.822152     Document Type: Conference Paper

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