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Volumn 95, Issue 9, 2009, Pages

Coulomb blockade behavior in an indium nitride nanowire with disordered surface states

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB OSCILLATION; DISORDERED SURFACES; ELECTRON TRANSPORT; EXPERIMENTAL DATA; HIGH TEMPERATURE; INDIUM NITRIDE; LOW BIAS VOLTAGE; LOW TEMPERATURES; METALLIC STATE; QUASI-PERIODIC STRUCTURES; SATELLITE PEAKS; SINGLE ELECTRON TRANSISTORS; SINGLE PERIOD;

EID: 69949167543     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3216071     Document Type: Article
Times cited : (5)

References (10)
  • 1
    • 33748593098 scopus 로고    scopus 로고
    • Nanowire electronic and optoelectronic devices
    • DOI 10.1016/S1369-7021(06)71650-9, PII S1369702106716509
    • Y. Li, F. Qian, J. Xiang, and C. M. Lieber, Mater. Today 1369-7021 9, 18 (2006). 10.1016/S1369-7021(06)71650-9 (Pubitemid 44380401)
    • (2006) Materials Today , vol.9 , Issue.10 , pp. 18-27
    • Li, Y.1    Qian, F.2    Xiang, J.3    Lieber, C.M.4
  • 2
    • 33745327664 scopus 로고    scopus 로고
    • Ge/Si nanowire heterostructures as high-performance field-effect transistors
    • DOI 10.1038/nature04796, PII NATURE04796
    • J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan, and C. M. Lieber, Nature (London) 0028-0836 441, 489 (2006). 10.1038/nature04796 (Pubitemid 44050147)
    • (2006) Nature , vol.441 , Issue.7092 , pp. 489-493
    • Xiang, J.1    Lu, W.2    Hu, Y.3    Wu, Y.4    Yan, H.5    Lieber, C.M.6
  • 10


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.