The impact of mask design on EUV imaging

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7379, Issue , 2009, Pages

  Schmoeller, Thomas ^a   Tyminski, Jacek K ^b   Lewellen, John ^c   Demmerle, Wolfgang ^a  

^a Synopsys GmbH   (Germany)

^b NIKON PRECISION INC   (United States)

^c SYNOPSYS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 69949126598     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.824331     Document Type: Conference Paper

References (12)

1. K. Otaki, "Asymmetric properties of the aerial image in extreme ultraviolet lithography", Jpn. J. Appl. Phys., Vol.39, p. 6819, 2000.
2. V. Domnenko, T. Schmoeller, T. Klimpel, "Analysis of EUVL mask effects under partially coherent illumination ", Proc. SPIE Vol. 7271, 2009.
3. Y. Deng, B. La Fontaine, H. J. Levinson, A. R. Neureuther, "Rigorous EM simulation of the influence of the structure of mask patterns on EUVL imaging ", Proc. SPIE Vol. 5037, p. 302, 2003.
4. B. La Fontaine, A. R. Pawlowski, Y. Deng, C. Chovino, L. Dieu, O. R. Wood II, H. J. Levinson, "Architectural choices for EUV Lithography masks: patterned absorbers and patterned reflectors ", Proc. SPIE Vol. 5374, p.300,2004.
5. Y. Deng, B. La Fontaine, A. R. Pawlowski, A. R. Neureuther, "Simulation of fine structures and defects in EUV etched multilayer masks", Proc. SPIE Vol. 5374, p. 760, 2004.
6. S.-I. Hang, E. Weisbrod, Q. Xie, P. J. S. Mangat, S. D. Hector, W. J. Dauksher, "Design and method of fabricating phase shift masks for extreme ultraviolet lithography by partial etching into the multilayer mirror", Proc. SPIE, Vol.5037, p. 315, 2003.
7. M. Sugawara, et al. "Pattern printability for off-axis incident light in EUV lithography", Proc. SPIE Vol. 4688, p. 277, 2002.
8. M. Sugawara, et al. "Influence of asymmetry of diffracted light on printability in EUV lithography", Proc. SPIE Vol. 5751, p. 721, 2005.
9. All simulations were carried out using Sentaurus Lithography (EUV), release B-2008.12.
10. H. Kang, S. Hansen, J. van Schoot. K. van Ingen Schenau, "EUV simulation extension study for mask shadowing effect and its correction", Emerging Lithographic Technologies XII, Proc. SPIE, Vol.6921, 2008.
11. M. Sugawara, "Assessment of pattern position shift for defocusing in EUV lithography", Proc. SPIE Vol. 6517, 65170X, 2007.
12. T. Schmoeller, T. Klimpel, I. Kim, G. F. Lorusso, A. Myers, R. Jonckheere, M. Goethals, K. Ronse, "EUV pattern shift and bias compensation strategies", Proc. SPIE Vol. 6921, 69211B, 2008.