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Volumn 50, Issue 7, 2009, Pages 1596-1602
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High-temperature thermoelectric measurement of B-Doped SiGe and Si thin films
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Author keywords
High temperature; Seebeck coefficient; SiGe; Silicon; Thin film
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Indexed keywords
AIR COOLING;
BORON-DOPED;
CHEMICAL VAPOR DEPOSITION METHODS;
FOUR-POINT;
HIGH TEMPERATURE;
HIGH TEMPERATURE MEASUREMENT;
MEASUREMENT PARAMETERS;
MEASUREMENT SYSTEM;
MEASUREMENT TECHNIQUES;
MICRO DEVICES;
PRESSURE CONTACTS;
RECENT PROGRESS;
RELIABLE MEASUREMENT;
ROOM TEMPERATURE;
SI FILMS;
SIGE;
TEMPERATURE DIFFERENCES;
TEMPERATURE RANGE;
THERMOELECTRIC MEASUREMENTS;
BORON;
COOLING SYSTEMS;
ELECTRODES;
GERMANIUM;
SEEBECK COEFFICIENT;
SEMICONDUCTING GERMANIUM COMPOUNDS;
SILICON;
SILICON ALLOYS;
TEMPERATURE MEASUREMENT;
THIN FILM DEVICES;
THIN FILMS;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 69749092048
PISSN: 13459678
EISSN: None
Source Type: Journal
DOI: 10.2320/matertrans.E-M2009811 Document Type: Article |
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Times cited : (15)
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References (14)
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