Boron-doped Si0.8 Ge0.2 thin film deposited by helicon sputtering for microthermoelectric hydrogen sensor

Journal of the Electrochemical Society

Volumn 154, Issue 1, 2007, Pages

  Tajima, Kazuki ^a   Shin, Woosuck ^a   Houlet, Lionel Fabrice ^a   Itoh, Toshio ^a   Izu, Noriya ^a   Matsubara, Ichiro ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL SENSORS; HELICONS; SEMICONDUCTING SILICON COMPOUNDS; SPUTTERING;

CONVENTIONAL RADIO FREQUENCY SPUTTERINGS; HELICON SPUTTERING; MICROTHERMOELECTRIC HYDROGEN SENSOR; OPERATING TEMPERATURE;

THIN FILMS;

EID: 33845277779     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2388858     Document Type: Article

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